g ? sic ? technology superbright? leds c xxx -cb290-s0100 f e a t u r e s a p p l i c a t i o n s ? high perform a nce ? 2.0m w (460nm ) deep blue ? 2.0m w (470nm ) blue ? 1.5m w (505nm ) signal green ? 1.0m w (527nm ) green ? sorted to w a velength and power bins ? single w i re bond structure ? class ii esd rating ? outdoor led video displays ? w h ite leds ? autom o tive dashboard lighting ? cellular phone backlighting ? audio product display lighting ? entertainm ent and am usem ent description cree' s cb? series of superbright? leds com b ine highly efficient ingan m a terials with cree' s proprietary sic substrate to deliver excellent price perform a nce for high intensity blue and green leds. these led chips have an industry-standard vertical chip structure, which requires only a single wire bond connection. sorted die kits provide die sheets conveni ently sorted into wavelength and radiant flux bins. cree' s cb series chips are individually tested for conf orm ity to optical and electrical specifications and the ability to withstand 1000v esd. these leds are us eful in a broad range of applications such as outdoor and indoor full m o tion led video signs, transpor tation signaling and white leds, yet can also be used in high volum e applications such as lcd backlighting. cree' s cb series chips are com p atible with m o st radial and smt led assem b ly processes. CXXX-CB290-S0100 chip diagram tops id e view g ? sic ? l e d chip 300 x 300 m mesa ( j un ctio n ) 240 x 240 m gol d b o n d p a d 120 m di am et er a n ode (+) die cros s section h = 250 m b ack s i de me t a llizat io n c a t h ode ( - ) in g a n si c su b s tr a t e cpr3u rev. h ? 1998- 2002 cr ee, i n c. all rights reser v ed.
g ? sic ? technology superbright? leds c xxx -cb290-s0100 maximum ratings at t a = 25c notes 1&3 CXXX-CB290-S0100 dc forward current 30 m a peak forward current (1/10 duty cycle @ 1khz) 100 m a led junction tem p erature 125c reverse voltage 5 v operating tem p erature range -20c to +80c storage tem p erature range -30c to +100c electrostatic discharge threshold (hbm) note 2 1 0 0 0 v electrostatic discharge classification (mil-std-883e) note 2 c l a s s 2 typical electrical/optical characteristics at t a = 25c, if = 20ma note 3 part num b er for w ar d voltage (v f, v) rev e rse cu rren t [ i(vr=5 v ), a] peak w a velength ( p, nm ) half width ( d, nm ) optical rise tim e ( , n s ) t y p m a x m a x t y p t y p t y p c460cb290- s 0 1 0 0 3. 3 3. 7 1 0 4 5 8 2 6 3 0 c470cb290- s 0 1 0 0 3. 3 3. 7 1 0 4 6 8 2 6 3 0 c505cb290- s 0 1 0 0 3. 3 3. 7 1 0 5 0 2 3 0 3 0 c525cb290- s 0 1 0 0 3. 3 3. 7 1 0 5 2 3 3 6 3 0 mechanical specifications c x x x - c b 2 9 0 - s 0 1 0 0 d e s c r i p t i o n d i m e n s i o n t o l e r a n c e p-n junction area (m ) 240 x 240 25 bottom area (m ) 300 x 300 25 chip thickness (m ) 250 25 au bond pad diam eter (m ) 120 20 au bond pad thickness (m ) 1.2 0.5 back contact metal w i dth (m ) 19.8 -5,+10 notes: 1) m a xim u m r a tings ar e package dependent. t h e above r a tings we r e deter m ined using a t - 1 3/4 package ( w ith hy sol os4000 epoxy ) f o r characterization. ratings for other packages m a y differ . t h e for w ar d cur r e nts ( d c and peak) are not lim ited by the die but by the ef f ect of the l e d junction tem p er atur e on the package. t h e junction tem p er atur e lim it of 125 c is a lim it of the t - 1 3/4 package; junction tem p er atur e should be char acter iz ed in a specif i c package to determ ine lim itations. assem b ly processing tem p er ature m u st not exceed 350c (< 15 m i nutes). 2) product resistance to electrostatic discharge (esd) according to the hbm is m easured by sim u lating esd using a rapid avalanc h e en erg y test (raet). th e raet procedures are designed to a pproxim a te the m a xim u m esd ratings shown. the raet procedure is perf orm e d on each die. the e sd classif i cation of class ii is based on sam p le testing according to mil-std 883e. 3) all pr oducts confor m to the listed m i nim u m and m a xim u m specifi cations for electr i cal and optical char acter istics, when assem bled and oper a ted at 20 m a within the m a xim u m r a tings shown above. e fficiency decr eases at higher cur r e nts. t y pical values given ar e within the r a nge of average values expected by the m a nufacturer in large quantities a nd are provided for inform ation onl y. all m easurem ents were m a de using lam p s in t-1 3/4 packa ges ( w ith hy sol os4000 epoxy ) . optical char acter istics wer e m easur ed in a photor esear ch spectr a scan i n tegr ating spher e . i llum i nance e . 4) specifications ar e subject to change without notice. cpr3u rev. h ? 1998- 2002 cr ee, i n c. all rights reser v ed.
g ? sic ? technology superbright? leds c xxx -cb290-s0100 standard bins: all led chips are sorted onto di e sheets according to the bins shown bel o w. 460c b 290- 0105 460c b 290- 0106 460c b 290- 0103 460c b 290- 0104 c 460c b 290- s0100 460c b 290- 0101 460c b 290- 0102 470c b 290- 0105 470c b 290- 0106 470c b 290- 0102 470c b 290- 0104 c 470c b 290- s0100 470c b 290- 0101 470c b 290- 0103 505c b 290- 0103 505c b 290- 0104 c 505c b 290- s0100 505c b 290- 0101 505c b 290- 0102 c 527c b 290- s0100 527c b 290- 0104 527c b 290- 0105 527c b 290- 0106 527c b 290- 0101 527c b 290- 0102 527c b 290- 0103 8.0m w 7.5m w 6.0m w 460n m 4.0m w 3.4m w 2.5m w s o rt ed di e ki t s m a y co n t ai n an y o r al l bins s how n to the le f t . 465n m 2.0m w 2.0m w 1.5m w 5.5m w 4.0m w 3.5m w 455n m 465n m 520n m 525n m 530n m 500n m 505n m 1.0m w 1.7m w 535n m 470n m 475n m 510n m cpr3u rev. h ? 1998- 2002 cr ee, i n c. all rights reser v ed.
cpr3u rev. h ? 1998- 2002 cr ee, i n c. all rights reser v ed. g ? sic ? technology superbright? leds c xxx -cb290-s0100 characteristic curves w a v e l e ng t h shi f t v s for w a r d c u r r e nt - a l l pr o d u c t s -4 .0 -2 .0 0. 0 2. 0 4. 0 6. 0 8. 0 10 . 0 12 . 0 14 . 0 16 . 0 0 5 10 15 20 2 5 30 if ( m a ) s h i ft (nm) 5 27n m 5 05n m 4 70n m re la t i ve in t e n s it y vs f o r w a r d c u rr e n t - a ll p r o d u c t s 0. 0 20 . 0 40 . 0 60 . 0 80 . 0 10 0. 0 12 0. 0 14 0. 0 0 5 10 15 2 0 25 3 0 if ( m a ) % r e lativ e in ten s ity v s w a v e len g th - all p r o d u c ts 0% 20 % 40 % 60 % 80 % 10 0% w a v e le n g t h (n m ) re la tiv e inte ns ity (%) 500 fo r w a r d cu r r e n t v s for w a r d v o l t ag e - a l l p r o duc ts 0 5 10 15 20 25 30 0.0 0 . 5 1.0 1 . 5 2.0 2 . 5 3.0 3 . 5 4.0 4 . 5 5.0 vf ( v ) if (ma )
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